[1936piezak Stock]
- Taldea zenbakia:
- RGF1M-7000HE3/5CA
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 1KV 1A DO214BA.
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristoreak - DIACak, SIDACak, Diodoak - Errektifikatzaileak - Bakarrak, Transistoreak - Elkartze programagarria, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Potentzia kontrolatzeko moduluak, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - FETak, MOSFETak - RF and Transistoreak - Bipolarrak (BJT) - Matrizeak ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division RGF1M-7000HE3/5CA electronic components. RGF1M-7000HE3/5CA can be shipped within 24 hours after order. If you have any demands for RGF1M-7000HE3/5CA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGF1M-7000HE3/5CA Produktuen atributuak
Taldea zenbakia :
RGF1M-7000HE3/5CA
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 1KV 1A DO214BA
Series :
Automotive, AEC-Q101, Superectifier®
Taldearen egoera :
Discontinued at Digi-Key
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
1000V
Oraingoa - Batez besteko laukizatua (Io) :
1A
Tentsioa - Aurrera (Vf) (Max) @ If :
1.3V @ 1A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
500ns
Oraingoa - alderantzizko ihesa @ Vr :
5µA @ 1000V
Edukiera @ Vr, F :
8.5pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-214BA
Hornitzaileentzako gailu paketea :
DO-214BA (GF1)
Eragiketa tenperatura - Junction :
-65°C ~ 175°C
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