ESH1BHE3_A/I Prezioak (USD) [678920piezak Stock]
- 1 pcs$0.05448
- Taldea zenbakia:
- ESH1BHE3_A/I
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A, 100V, 25NS, SMA AEC-Q101 Qualified
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Diodoak - Edukiera aldakorra (Varicaps, Varactors), Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Transistoreak - Xede Berezia, Transistoreak - FETak, MOSFETak - Bakarrak, Diodoak - RF, Diodoak - Errektifikatzaileak - Bakarrak, Transistoreak - Bipolarrak (BJT) - RF and Tiristorrak - EKTak ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division ESH1BHE3_A/I electronic components. ESH1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for ESH1BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH1BHE3_A/I Produktuen atributuak
Taldea zenbakia :
ESH1BHE3_A/I
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 100V 1A DO214AC
Series :
Automotive, AEC-Q101
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
100V
Oraingoa - Batez besteko laukizatua (Io) :
1A
Tentsioa - Aurrera (Vf) (Max) @ If :
900mV @ 1A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
25ns
Oraingoa - alderantzizko ihesa @ Vr :
1µA @ 100V
Edukiera @ Vr, F :
25pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-214AC, SMA
Hornitzaileentzako gailu paketea :
DO-214AC (SMA)
Eragiketa tenperatura - Junction :
-55°C ~ 175°C
Azken berriak
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