Vishay Semiconductor Diodes Division - GBU8JL-5302E3/45

KEY Part #: K6541041

[12507piezak Stock]


    Taldea zenbakia:
    GBU8JL-5302E3/45
    fabrikatzailea:
    Vishay Semiconductor Diodes Division
    Deskribapen zehatza:
    BRIDGE RECT 1PHASE 600V 3.9A GBU.
    Fabrikatzailearen denbora beruna:
    Badago
    Bizimodua:
    Urte bat
    Chip From:
    Hong Kong
    RoHS:
    Ordaintzeko modua:
    Bidalketa modua:
    Familia Kategoriak:
    KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - IGBTak - Arrays, Transistoreak - JFETak, Tiristoreak - DIACak, SIDACak, Tiristorrak - EKTak, Tiristoreak - TRIACak, Diodoak - Zener - Arrays, Transistoreak - IGBTak - Bakarka and Transistoreak - Bipolarrak (BJT) - RF ...
    Abantaila lehiakorra:
    We specialize in Vishay Semiconductor Diodes Division GBU8JL-5302E3/45 electronic components. GBU8JL-5302E3/45 can be shipped within 24 hours after order. If you have any demands for GBU8JL-5302E3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GBU8JL-5302E3/45 Produktuen atributuak

    Taldea zenbakia : GBU8JL-5302E3/45
    fabrikatzailea : Vishay Semiconductor Diodes Division
    deskribapena : BRIDGE RECT 1PHASE 600V 3.9A GBU
    Series : -
    Taldearen egoera : Obsolete
    Diodo mota : Single Phase
    Teknologia : Standard
    Tentsioa - Alderantzikatua (Max) : 600V
    Oraingoa - Batez besteko laukizatua (Io) : 3.9A
    Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 8A
    Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 600V
    Eragiketa tenperatura : -55°C ~ 150°C (TJ)
    Muntatzeko mota : Through Hole
    Paketea / Kaxa : 4-SIP, GBU
    Hornitzaileentzako gailu paketea : GBU

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