Taiwan Semiconductor Corporation - S1JL R3G

KEY Part #: K6433204

S1JL R3G Prezioak (USD) [1299630piezak Stock]

  • 1 pcs$0.02846

Taldea zenbakia:
S1JL R3G
fabrikatzailea:
Taiwan Semiconductor Corporation
Deskribapen zehatza:
DIODE GEN PURP 600V 1A SUB SMA. Rectifiers 1A, 600V, GLASS PASSIVATED SMF RECTIFIER
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, Transistoreak - FETak, MOSFETak - Bakarrak, Transistoreak - Elkartze programagarria, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - FETak, MOSFETak - RF, Transistoreak - Bipolarrak (BJT) - Matrizeak and Diodoak - RF ...
Abantaila lehiakorra:
We specialize in Taiwan Semiconductor Corporation S1JL R3G electronic components. S1JL R3G can be shipped within 24 hours after order. If you have any demands for S1JL R3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1JL R3G Produktuen atributuak

Taldea zenbakia : S1JL R3G
fabrikatzailea : Taiwan Semiconductor Corporation
deskribapena : DIODE GEN PURP 600V 1A SUB SMA
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 600V
Oraingoa - Batez besteko laukizatua (Io) : 1A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 1A
Abiadura : Standard Recovery >500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 1.8µs
Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 600V
Edukiera @ Vr, F : 9pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-219AB
Hornitzaileentzako gailu paketea : Sub SMA
Eragiketa tenperatura - Junction : -55°C ~ 175°C

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