[14179piezak Stock]
- Taldea zenbakia:
- KLUDG8J1ZD-B0CQ
- fabrikatzailea:
- Samsung Semiconductor
- Deskribapen zehatza:
- UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production.
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: MODULE, SLC Nand, LPDDR5, GDDR5, DDR4, GDDR6, LPDDR4X and LPDDR3 ...
- Abantaila lehiakorra:
- We specialize in Samsung Semiconductor KLUDG8J1ZD-B0CQ electronic components. KLUDG8J1ZD-B0CQ can be shipped within 24 hours after order. If you have any demands for KLUDG8J1ZD-B0CQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
KLUDG8J1ZD-B0CQ Produktuen atributuak
Taldea zenbakia :
KLUDG8J1ZD-B0CQ
fabrikatzailea :
Samsung Semiconductor
deskribapena :
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production
Series :
DDR3
Bertsio :
UFS 2.1
dentsitatea :
128 GB
Tentsioa :
1.8 / 3.3 V
Interface :
G3 2Lane
Pakete neurria :
11.5 x 13 x 1.2 mm
Aldi baterako. :
-40 ~ 105 °C
Produktuen Status :
Mass Production
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