Vishay Semiconductor Diodes Division - BAQ333-TR

KEY Part #: K6455088

BAQ333-TR Prezioak (USD) [1626459piezak Stock]

  • 1 pcs$0.02400
  • 2,500 pcs$0.02388
  • 5,000 pcs$0.02076
  • 12,500 pcs$0.01765
  • 25,000 pcs$0.01661
  • 62,500 pcs$0.01557
  • 125,000 pcs$0.01384

Taldea zenbakia:
BAQ333-TR
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GP 40V 200MA MICROMELF. Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - IGBTak - Moduluak, Diodoak - Errektifikatzaileak - Arrays, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Transistoreak - FETak, MOSFETak - Arrays, Tiristorrak - SCRak - Moduluak, Transistoreak - Elkartze programagarria, Transistoreak - FETak, MOSFETak - RF and Transistoreak - Bipolarrak (BJT) - Bakarka ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division BAQ333-TR electronic components. BAQ333-TR can be shipped within 24 hours after order. If you have any demands for BAQ333-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAQ333-TR Produktuen atributuak

Taldea zenbakia : BAQ333-TR
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GP 40V 200MA MICROMELF
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 40V
Oraingoa - Batez besteko laukizatua (Io) : 200mA
Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 100mA
Abiadura : Small Signal =< 200mA (Io), Any Speed
Alderantzizko berreskurapen denbora (trr) : -
Oraingoa - alderantzizko ihesa @ Vr : 1nA @ 15V
Edukiera @ Vr, F : 3pF @ 0V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : 2-SMD, No Lead
Hornitzaileentzako gailu paketea : MicroMELF
Eragiketa tenperatura - Junction : 175°C (Max)

Era berean, interesatuko zaizu
  • RURD660S9A

    ON Semiconductor

    DIODE GEN PURP 600V 6A TO252-3. Diodes - General Purpose, Power, Switching 6A 600V

  • BAS116E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • MBRB40250TG

    ON Semiconductor

    DIODE SCHOTTKY 250V 40A D2PAK. Schottky Diodes & Rectifiers REC D2PAK 40A 250V SHOTTKY

  • VS-50WQ04FN-M3

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 40V 5.5A DPAK. Schottky Diodes & Rectifiers Schottky - D-PAK-e3

  • SD103AW-G3-08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 350MA 40V SOD123. Schottky Diodes & Rectifiers 5uA 40Volt 15A IFSM

  • SD103BW-E3-08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 350MA 30V SOD123. Schottky Diodes & Rectifiers 5uA 30Volt 15A IFSM