BYM11-1000HE3_A/I Prezioak (USD) [777077piezak Stock]
- 1 pcs$0.04760
- Taldea zenbakia:
- BYM11-1000HE3_A/I
- fabrikatzailea:
- Vishay Semiconductor Diodes Division
- Deskribapen zehatza:
- DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1A,1000V,500NS GL41 AEC-Q101 Qualified
- Fabrikatzailearen denbora beruna:
- Badago
- Bizimodua:
- Urte bat
- Chip From:
- Hong Kong
- RoHS:
- Ordaintzeko modua:
-
- Bidalketa modua:
- Familia Kategoriak:
- KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Tiristorrak - EKTak, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Transistoreak - Bipolarrak (BJT) - Bakarka, Transistoreak - JFETak, Diodoak - Zener - Bakarka, Transistoreak - Bipolarrak (BJT) - RF, Transistoreak - FETak, MOSFETak - Arrays and Transistoreak - IGBTak - Arrays ...
- Abantaila lehiakorra:
- We specialize in Vishay Semiconductor Diodes Division BYM11-1000HE3_A/I electronic components. BYM11-1000HE3_A/I can be shipped within 24 hours after order. If you have any demands for BYM11-1000HE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYM11-1000HE3_A/I Produktuen atributuak
Taldea zenbakia :
BYM11-1000HE3_A/I
fabrikatzailea :
Vishay Semiconductor Diodes Division
deskribapena :
DIODE GEN PURP 1KV 1A DO213AB
Series :
Automotive, AEC-Q101, Superectifier®
Taldearen egoera :
Active
Diodo mota :
Standard
Tentsioa - DC alderantzikatua (Vr) (Max) :
1000V
Oraingoa - Batez besteko laukizatua (Io) :
1A
Tentsioa - Aurrera (Vf) (Max) @ If :
1.3V @ 1A
Abiadura :
Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) :
500ns
Oraingoa - alderantzizko ihesa @ Vr :
5µA @ 1000V
Edukiera @ Vr, F :
15pF @ 4V, 1MHz
Muntatzeko mota :
Surface Mount
Paketea / Kaxa :
DO-213AB, MELF (Glass)
Hornitzaileentzako gailu paketea :
DO-213AB
Eragiketa tenperatura - Junction :
-65°C ~ 175°C
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