Vishay Semiconductor Diodes Division - VI20120SG-M3/4W

KEY Part #: K6427811

VI20120SG-M3/4W Prezioak (USD) [183104piezak Stock]

  • 1 pcs$0.21316
  • 1,000 pcs$0.21210

Taldea zenbakia:
VI20120SG-M3/4W
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE SCHOTTKY 20A 120V TO-262AA. Schottky Diodes & Rectifiers 20A,120V,TRENCH SKY RECT.
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - JFETak, Diodoak - Zener - Arrays, Tiristoreak - DIACak, SIDACak, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Tiristoreak - TRIACak, Diodoak - Zubi zatitzaileak, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde and Transistoreak - IGBTak - Bakarka ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division VI20120SG-M3/4W electronic components. VI20120SG-M3/4W can be shipped within 24 hours after order. If you have any demands for VI20120SG-M3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VI20120SG-M3/4W Produktuen atributuak

Taldea zenbakia : VI20120SG-M3/4W
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE SCHOTTKY 20A 120V TO-262AA
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Schottky
Tentsioa - DC alderantzikatua (Vr) (Max) : 120V
Oraingoa - Batez besteko laukizatua (Io) : 20A
Tentsioa - Aurrera (Vf) (Max) @ If : 1.33V @ 20A
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : -
Oraingoa - alderantzizko ihesa @ Vr : 250µA @ 120V
Edukiera @ Vr, F : -
Muntatzeko mota : Through Hole
Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA
Hornitzaileentzako gailu paketea : TO-262AA
Eragiketa tenperatura - Junction : -40°C ~ 150°C

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