Vishay Semiconductor Diodes Division - G2SB80-E3/51

KEY Part #: K6538161

G2SB80-E3/51 Prezioak (USD) [171507piezak Stock]

  • 1 pcs$0.21566
  • 1,200 pcs$0.17922

Taldea zenbakia:
G2SB80-E3/51
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
BRIDGE RECT 1PHASE 800V 1.5A GBL. Bridge Rectifiers 800 Volt 1.5 Amp Glass Passivated
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, Transistoreak - FETak, MOSFETak - Bakarrak, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Diodoak - Zubi zatitzaileak, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Transistoreak - Bipolarrak (BJT) - Matrizeak, Tiristorrak - SCRak - Moduluak and Transistoreak - FETak, MOSFETak - Arrays ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division G2SB80-E3/51 electronic components. G2SB80-E3/51 can be shipped within 24 hours after order. If you have any demands for G2SB80-E3/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

G2SB80-E3/51 Produktuen atributuak

Taldea zenbakia : G2SB80-E3/51
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : BRIDGE RECT 1PHASE 800V 1.5A GBL
Series : -
Taldearen egoera : Active
Diodo mota : Single Phase
Teknologia : Standard
Tentsioa - Alderantzikatua (Max) : 800V
Oraingoa - Batez besteko laukizatua (Io) : 1.5A
Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 750mA
Oraingoa - alderantzizko ihesa @ Vr : 50µA @ 600V
Eragiketa tenperatura : -55°C ~ 150°C (TJ)
Muntatzeko mota : Through Hole
Paketea / Kaxa : 4-SIP, GBL
Hornitzaileentzako gailu paketea : GBL

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