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Zure kokapena zerrendatuta ez badago, hautatu hauetako bat:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Hasiera
  2. Produktuak
  3. Produktu erdieroale diskretuak
  4. Transistoreak - FETak, MOSFETak - Arrays
  5. NVMD3P03R2G

ON Semiconductor - NVMD3P03R2G

KEY Part #: K6522970

NVMD3P03R2G Prezioak (USD) [115660piezak Stock]

  • 1 pcs$0.31979
  • 2,500 pcs$0.30149
Taldea zenbakia:
NVMD3P03R2G
fabrikatzailea:
ON Semiconductor
Deskribapen zehatza:
MOSFET 2P-CH 30V 2.34A 8SOIC.
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - Bipolarrak (BJT) - Bakarka, Diodoak - Edukiera aldakorra (Varicaps, Varactors), Tiristorrak - SCRak - Moduluak, Diodoak - Zener - Bakarka, Transistoreak - FETak, MOSFETak - RF, Tiristoreak - TRIACak, Tiristoreak - DIACak, SIDACak and Transistoreak - Bipolarrak (BJT) - RF ...
Abantaila lehiakorra:
We specialize in ON Semiconductor NVMD3P03R2G electronic components. NVMD3P03R2G can be shipped within 24 hours after order. If you have any demands for NVMD3P03R2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMD3P03R2G Produktuen atributuak

Taldea zenbakia : NVMD3P03R2G
fabrikatzailea : ON Semiconductor
deskribapena : MOSFET 2P-CH 30V 2.34A 8SOIC
Series : -
Taldearen egoera : Active
FET Mota : 2 P-Channel (Dual)
FET Ezaugarria : Logic Level Gate
Xukatu iturburuko tentsioa (Vdss) : 30V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 2.34A
Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.05A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Ateko karga (Qg) (Max) @ Vgs : 25nC @ 10V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 750pF @ 24V
Potentzia - Max : 730mW
Eragiketa tenperatura : -55°C ~ 150°C (TJ)
Muntatzeko mota : Surface Mount
Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)
Hornitzaileentzako gailu paketea : 8-SOIC

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