Vishay Semiconductor Diodes Division - 1N4448W-HE3-18

KEY Part #: K6439937

1N4448W-HE3-18 Prezioak (USD) [2422835piezak Stock]

  • 1 pcs$0.01527
  • 10,000 pcs$0.01412

Taldea zenbakia:
1N4448W-HE3-18
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Potentzia kontrolatzeko moduluak, Tiristoreak - TRIACak, Diodoak - Errektifikatzaileak - Bakarrak, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Transistoreak - Bipolarrak (BJT) - Matrizeak, Transistoreak - Bipolarrak (BJT) - Matrizeak, alde, Tiristoreak - DIACak, SIDACak and Transistoreak - Xede Berezia ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division 1N4448W-HE3-18 electronic components. 1N4448W-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4448W-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4448W-HE3-18 Produktuen atributuak

Taldea zenbakia : 1N4448W-HE3-18
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 75V 150MA SOD123
Series : Automotive, AEC-Q101
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 75V
Oraingoa - Batez besteko laukizatua (Io) : 150mA
Tentsioa - Aurrera (Vf) (Max) @ If : 720mV @ 5mA
Abiadura : Small Signal =< 200mA (Io), Any Speed
Alderantzizko berreskurapen denbora (trr) : 4ns
Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 75V
Edukiera @ Vr, F : -
Muntatzeko mota : Surface Mount
Paketea / Kaxa : SOD-123
Hornitzaileentzako gailu paketea : SOD-123
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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