Vishay Semiconductor Diodes Division - ES1B-M3/5AT

KEY Part #: K6433326

ES1B-M3/5AT Prezioak (USD) [1057336piezak Stock]

  • 1 pcs$0.03691
  • 22,500 pcs$0.03673

Taldea zenbakia:
ES1B-M3/5AT
fabrikatzailea:
Vishay Semiconductor Diodes Division
Deskribapen zehatza:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1A,100V,15NS,UF Rect, SMD
Fabrikatzailearen denbora beruna:
Badago
Bizimodua:
Urte bat
Chip From:
Hong Kong
RoHS:
Ordaintzeko modua:
Bidalketa modua:
Familia Kategoriak:
KEY Components Co., LTD. Osagaien banatzaile elektronikoa da. Produktuen kategoria eskaintzen du: Transistoreak - JFETak, Transistoreak - FETak, MOSFETak - Arrays, Tiristoreak - TRIACak, Diodoak - Zener - Arrays, Transistoreak - Bipolarrak (BJT) - Bakarka, aldez , Transistoreak - IGBTak - Moduluak, Tiristorrak - SCRak - Moduluak and Transistoreak - Elkartze programagarria ...
Abantaila lehiakorra:
We specialize in Vishay Semiconductor Diodes Division ES1B-M3/5AT electronic components. ES1B-M3/5AT can be shipped within 24 hours after order. If you have any demands for ES1B-M3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1B-M3/5AT Produktuen atributuak

Taldea zenbakia : ES1B-M3/5AT
fabrikatzailea : Vishay Semiconductor Diodes Division
deskribapena : DIODE GEN PURP 100V 1A DO214AC
Series : -
Taldearen egoera : Active
Diodo mota : Standard
Tentsioa - DC alderantzikatua (Vr) (Max) : 100V
Oraingoa - Batez besteko laukizatua (Io) : 1A
Tentsioa - Aurrera (Vf) (Max) @ If : 920mV @ 1A
Abiadura : Fast Recovery =< 500ns, > 200mA (Io)
Alderantzizko berreskurapen denbora (trr) : 25ns
Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 100V
Edukiera @ Vr, F : 10pF @ 4V, 1MHz
Muntatzeko mota : Surface Mount
Paketea / Kaxa : DO-214AC, SMA
Hornitzaileentzako gailu paketea : DO-214AC (SMA)
Eragiketa tenperatura - Junction : -55°C ~ 150°C

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